The circuits and filters handbook = Analog and VLSI circuits

Analog and

VLSI Circuits

The Circuits and Filters

Handbook

Third Edition

Fundamentals of Circuits and Filters

Feedback, Nonlinear, and Distributed Circuits

Analog and VLSI Circuits

Computer Aided Design and Design Automation

Passive, Active, and Digital Filters

Edited by

Wai-Kai Chen

Edited by

Wai-Kai Chen

University of Illinois

Chicago, U. S. A.

The Circuits and Filters Handbook

Third Edition

Analog and

VLSI Circuits

CRC Press

Taylor & Francis Group

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Boca Raton, FL 33487-2742

© 2009 by Taylor & Francis Group, LLC

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Library of Congress Cataloging-in-Publication Data

Analog and VLSI circuits / edited by Wai-Kai Chen.

p. cm.

Includes bibliographical references and index.

ISBN-13: 978-1-4200-5891-8

ISBN-10: 1-4200-5891-6

1. Linear integrated circuits. 2. Integrated circuits--Very large scale integration. 3. Electronic

circuits. I. Chen, Wai-Kai, 1936- II. Title.

TK7874.654.A47 2009

621.39’5--dc22 2008048128

Visit the Taylor & Francis Web site at

http://www.taylorandfrancis.com

and the CRC Press Web site at

http://www.crcpress.com

Contents

Preface .................................................................................................................................................. vii

Editor-in-Chief .................................................................................................................................... ix

Contributors ........................................................................................................................................ xi

SECTION I Analog Integrated Circuits

1 Monolithic Device Models .................................................................................................. 1-1

Bogdan M. Wilamowski, Guofu Niu, John Choma, Jr.,

Stephen I. Long, Nhat M. Nguyen, and Martin A. Brooke

2 Analog Circuit Cells ............................................................................................................. 2-1

Kenneth V. Noren, John Choma, Jr., J. Trujillo, David G. Haigh

Bill Redman-White, Rahim Akbari-Dilmaghani, Mohammed Ismail,

Shu-Chuan Huang, Chung-Chih Hung, and Trond Saether

3 High-Performance Analog Circuits .................................................................................. 3-1

Chris Toumazou, Alison Payne, John Lidgey, Alicja Konczakowska,

and Bogdan M. Wilamowski

4 RF Communication Circuits............................................................................................... 4-1

Michiel Steyaert, Wouter De Cock, and Patrick Reynaert

5 PLL Circuits ............................................................................................................................ 5-1

Muh-Tian Shiue and Chorng-Kuang Wang

6 Synthesis of Reactance Pulse-Forming Networks .......................................................... 6-1

Igor M. Filanovsky

SECTION II The VLSI Circuits

7 Fundamentals of Digital Signal Processing ..................................................................... 7-1

Roland Priemer

8 Digital Circuits ....................................................................................................................... 8-1

John P. Uyemura, Robert C. Chang, and Bing J. Sheu

v

9 Digital Systems....................................................................................................................... 9-1

Festus Gail Gray, Wayne D. Grover, Josephine C. Chang, Bing J. Sheu

Roland Priemer, Kung Yao, and Flavio Lorenzelli

10 Data Converters ................................................................................................................... 10-1

Bang-Sup Song and Ramesh Harjani

Index ................................................................................................................................................IN-1

vi Contents

Preface

The purpose of this book is to provide in a single volume a comprehensive reference work covering the

broad spectrum of monolithic device models, high-performance analog circuits, radio-frequency com￾munications and PLL circuits, digital systems, and data converters. This book is written and developed

for the practicing electrical engineers and computer scientists in industry, government, and academia.

The goal is to provide the most up-to-date information in the field.

Over the years, the fundamentals of the field have evolved to include a wide range of topics and a broad

range of practice. To encompass such a wide range of knowledge, this book focuses on the key concepts,

models, and equations that enable the design engineer to analyze, design, and predict the behavior of

large-scale circuits and systems. While design formulas and tables are listed, emphasis is placed on the

key concepts and theories underlying the processes.

This book stresses fundamental theories behind professional applications and uses several examples to

reinforce this point. Extensive development of theory and details of proofs have been omitted. The reader

is assumed to have a certain degree of sophistication and experience. However, brief reviews of theories,

principles, and mathematics of some subject areas are given. These reviews have been done concisely with

perception.

The compilation of this book would not have been possible without the dedication and efforts of

Professor John Choma, Jr., and most of all the contributing authors. I wish to thank them all.

Wai-Kai Chen

vii

Editor-in-Chief

Wai-Kai Chen is a professor and head emeritus of the Department

of Electrical Engineering and Computer Science at the University of

Illinois at Chicago. He received his BS and MS in electrical engin￾eering at Ohio University, where he was later recognized as a

distinguished professor. He earned his PhD in electrical engineer￾ing at the University of Illinois at Urbana–Champaign.

Professor Chen has extensive experience in education and indus￾try and is very active professionally in the fields of circuits and

systems. He has served as a visiting professor at Purdue University,

the University of Hawaii at Manoa, and Chuo University in Tokyo,

Japan. He was the editor-in-chief of the IEEE Transactions on

Circuits and Systems, Series I and II, the president of the IEEE

Circuits and Systems Society, and is the founding editor and the

editor-in-chief of the Journal of Circuits, Systems and Computers.

He received the Lester R. Ford Award from the Mathematical

Association of America; the Alexander von Humboldt Award from Germany; the JSPS Fellowship

Award from the Japan Society for the Promotion of Science; the National Taipei University of Science

and Technology Distinguished Alumnus Award; the Ohio University Alumni Medal of Merit for

Distinguished Achievement in Engineering Education; the Senior University Scholar Award and the

2000 Faculty Research Award from the University of Illinois at Chicago; and the Distinguished Alumnus

Award from the University of Illinois at Urbana–Champaign. He is the recipient of the Golden Jubilee

Medal, the Education Award, and the Meritorious Service Award from the IEEE Circuits and Systems

Society, and the Third Millennium Medal from the IEEE. He has also received more than a dozen

honorary professorship awards from major institutions in Taiwan and China.

A fellow of the Institute of Electrical and Electronics Engineers (IEEE) and the American Association

for the Advancement of Science (AAAS), Professor Chen is widely known in the profession for the

following works: Applied Graph Theory (North-Holland), Theory and Design of Broadband Matching

Networks (Pergamon Press), Active Network and Feedback Amplifier Theory (McGraw-Hill), Linear

Networks and Systems (Brooks=Cole), Passive and Active Filters: Theory and Implements (John Wiley),

Theory of Nets: Flows in Networks (Wiley-Interscience), The Electrical Engineering Handbook (Academic

Press), and The VLSI Handbook (CRC Press).

ix

Contributors

Rahim Akbari-Dilmaghani

Department of Electronic and

Electrical Engineering

University College of London

London, United Kingdom

Martin A. Brooke

School of Electrical and

Computer Engineering

Georgia Institute of Technology

Atlanta, Georgia

Josephine C. Chang

Ming Hsieh Department of

Electrical Engineering

University of Southern

California

Los Angeles, California

Robert C. Chang

Ming Hsieh Department of

Electrical Engineering

University of Southern

California

Los Angeles, California

John Choma, Jr.

Ming Hsieh Department

of Electrical Engineering

University of Southern

California

Los Angeles, California

Wouter De Cock

Department of Electrical

Engineering

Catholic University of Leuven

Leuven, Belgium

Igor M. Filanovsky

Department of Electrical

Engineering

University of Alberta

Edmonton, Alberta,

Canada

Festus Gail Gray

Department of Electrical and

Computer Engineering

Virginia Polytechnic Institute

and State University

Blacksburg, Virginia

Wayne D. Grover

Network Systems

TRLabs

Edmonton, Alberta, Canada

and

Department of Electrical and

Computer Engineering

University of Alberta

Edmonton, Alberta, Canada

David G. Haigh

Department of Electronic and

Electrical Engineering

University College of

London

London, United Kingdom

Ramesh Harjani

Department of Electrical

Engineering

University of Minnesota

Minneapolis, Minnesota

Shu-Chuan Huang

Department of Electrical

Engineering

Ohio State University

Columbus, Ohio

Chung-Chih Hung

Department of Electrical

Engineering

Tatung Institute of Technology

Taipei, Taiwan

Mohammed Ismail

Department of Electrical

Engineering

Ohio State University

Columbus, Ohio

Alicja Konczakowska

Department of

Optoelectronics and

Electronics Systems

Gdansk University of

Technology

Gdansk, Poland

John Lidgey

School of Technology

Oxford Brookes University

London, United Kingdom

Stephen I. Long

Department of Electrical

and Computer Engineering

University of California,

Santa Barbara

Santa Barbara, California

xi

Flavio Lorenzelli

SGS-Thomson Microelectronics

Milan, Italy

and

University of Milan, Crema

Crema, Italy

Nhat M. Nguyen

Rambus Inc.

Los Altos, California

Guofu Niu

Department of Electrical and

Computer Engineering

Auburn University

Auburn, Alabama

Kenneth V. Noren

Department of Electrical and

Computer Engineering

University of Idaho

Moscow, Idaho

Alison Payne

Institute of Biomedical

Engineering

Imperial College of Science,

Technology, and Medicine

London, United Kingdom

Roland Priemer

Department of Electrical and

Computer Engineering

University of Illinois at Chicago

Chicago, Illinois

Bill Redman-White

School of Electronics and

Computer Science

University of Southampton

Southampton, United Kingdom

Patrick Reynaert

Department of Electrical

Engineering

Catholic University of Leuven

Leuven, Belgium

Trond Saether

Nordic VLSI A=S

Flatasen, Norway

Bing J. Sheu

Taiwan Semiconductor

Manufacturing Company

Hsin-Chu, Taiwan

Muh-Tian Shiue

Department of Electrical

Engineering

National Central University

Chung-Li, Taiwan

Bang-Sup Song

Department of Electrical and

Computer Engineering

University of California, San

Diego

San Diego, California

Michiel Steyaert

Department of Electrical

Engineering

Catholic University of Leuven

Leuven, Belgium

Chris Toumazou

Institute of Biomedical

Engineering

Imperial College of Science,

Technology, and Medicine

London, United Kingdom

J. Trujillo

Ming Hsieh Department of

Electrical Engineering

University of Southern

California

Los Angeles, California

John P. Uyemura

School of Electrical

Engineering

Georgia Institute of

Technology

Atlanta, Georgia

Chorng-Kuang Wang

Department of Electrical

Engineering

National Taiwan University

Taipei, Taiwan

Bogdan M. Wilamowski

Alabama Nano=Micro Science

and Technology Center

Department of Electrical

and Computer Engineering

Auburn University

Auburn, Alabama

Kung Yao

Electrical Engineering

Department

University of Southern

California, Los Angeles

Los Angeles, California

xii Contributors

1

Monolithic Device

Models

Bogdan M. Wilamowski

Auburn University

Guofu Niu

Auburn University

John Choma, Jr.

University of Southern California

Stephen I. Long

University of California, Santa Barbara

Nhat M. Nguyen

Rambus Inc.

Martin A. Brooke

Georgia Institute of Technology

1.1 Bipolar Junction Transistor ..................................................... 1-1

Ebers–Moll Model . Gummel–Poon Model . Current

Gains of Bipolar Transistors . High-Current

Phenomena . Small-Signal Model . Technologies . Model

Parameters . SiGe HBTs

References ............................................................................................ 1-20

1.2 Metal–Oxide–Silicon Field Effect Transistor..................... 1-21

Introduction . Channel Charge . Volt–Ampere

Characteristics . Transistor Capacitances . Small-Signal

Operation . Design-Oriented Analysis Strategy

References ............................................................................................ 1-81

1.3 JFET, MESFET, and HEMT Technology and Devices.... 1-82

Introduction . Silicon JFET Device Operation

and Technology . Compound Semiconductor

FET Technologies . Conclusion

References .......................................................................................... 1-101

1.4 Passive Components.............................................................. 1-103

Resistors . Capacitors . Inductors

References .......................................................................................... 1-131

1.5 Chip Parasitics in Analog Integrated Circuits................. 1-132

Interconnect Parasitics . Pad and Packaging

Parasitics . Parasitic Measurement

References .......................................................................................... 1-145

1.1 Bipolar Junction Transistor

Bogdan M. Wilamowski and Guofu Niu

The bipolar junction transistor (BJT) is historically the first solid-state analog amplifier and digital

switch, and formed the basis of integrated circuits (ICs) in the 1970s. Starting in the early 1980s, the

MOSFET had gradually taken over, particularly for main stream digital ICs. However, in the 1990s,

the invention of silicon–germanium base heterojunction bipolar transistor (SiGe HBT) brought the

bipolar transistor back into high-volume commercial production, mainly for the now widespread wireless

and wire line communications applications. Today, SiGe HBTs are used to design radio-frequency (RF)

ICs and systems for cell phones, wireless local area network (WLAN), automobile collision avoidance

1-1

radar, wireless distribution of cable television, millimeter wave radios, and many more applications, due

to its outstanding high-frequency performance and ability to integrate with CMOS for realizing digital,

analog, and RF functions on the same chip.

Below we first introduce the basic concepts of BJT using a historically important equivalent circuit

model, the Ebers–Moll model. Then the Gummel–Poon model is introduced, as it is widely used for

computer-aided design, and is the basis of modern BJT models like the VBIC, Mextram, and HICUM

models. Current gain, high-current phenomena, fabrication technologies, and SiGe HBTs are then

discussed.

1.1.1 Ebers–Moll Model

A NPN BJT consists of two closely spaced PN junctions connected back to back sharing the same p-type

region, as shown in Figure 1.1a. The drawing is not drawn to scale. The emitter and base layers are thin,

typically less than 1 mm, and the collector is much thicker to support a high output voltage swing. For

forward mode operation, the emitter–base (EB) junction is forward biased, and the collector–base (CB)

junction is reverse biased. Minority carriers are injected from emitter to base, travel across the base, and

are then collected by the reverse biased CB junction. Therefore, the collector current is transported from

the EB junction, and thus proportional to the EB junction current. In the forward-active mode, the

current–voltage characteristic of the EB junction is described by the well-known diode equation

IEF ¼ IE0 exp

VBE

VT

1

  (1:1)

B

B

B

IEF

ICR

ICF = αFIEF

IER = αRIER

E

E

E

N N

C

C

(a)

(b)

(c)

C

P

FIGURE 1.1 (a) Cross-sectional view of a NPN BJT. (b) Circuit symbol. (c) The Ebers–Moll equivalent circuit

model.

1-2 Analog and VLSI Circuits