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An Experimental Approach to CDMA and Interference Mitigation phần 9 potx
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Mô tả chi tiết
5. Interference Mitigation Processor ASIC’s Design 217
up possible asynchronous transitions. The pad cell used by all output pins is
the B2TR_TC, a 3.3V output pad with slew-rate control and a maximum DC
current of 2 mA, suited for loads up to 50 pF.
PAD
placement
PAD
placement
ICpack
Veriloggate level netlist PAD list Veriloggate level netlist Blast Fusi on
Place and route phases:
• f loor planningand
macro placement
• power routing
• cell placement and
global routing
• clock tree sy nthesis
• f iller cells
• f inal routing
• parameters extraction
Verilog
post-layout
netlist
Parasitic
parameters GDSII
layout
GDSII
layout
Formal
v erif ication
Formal
v erif ication
Formality
Static
Timing
Analy sis
Static
Timing
Analy sis
PrimeTime
Post-lay out
simulation
Post-lay out
simulation
VSS
Layout
finishing
Layout
finishing
OPUS
GDSII
final layout
GDSII
final layout
DRC
LVS
DRC
LVS
Calibre
Tapeout Magma
Synopsys
Mentor
Cadence
PAD
placement
PAD
placement
ICpack
Veriloggate level netlist PAD list Veriloggate level netlist Blast Fusi on
Place and route phases:
• f loor planningand
macro placement
• power routing
• cell placement and
global routing
• clock tree sy nthesis
• f iller cells
• f inal routing
• parameters extraction
Verilog
post-layout
netlist
Parasitic
parameters GDSII
layout
GDSII
layout
Formal
v erif ication
Formal
v erif ication
Formality
Static
Timing
Analy sis
Static
Timing
Analy sis
PrimeTime
Post-lay out
simulation
Post-lay out
simulation
VSS
Layout
finishing
Layout
finishing
OPUS
GDSII
final layout
GDSII
final layout
DRC
LVS
DRC
LVS
Calibre
Tapeout Magma
Synopsys
Mentor
Cadence
Figure 5-26. Back End design flow.
Identification of the correct number of power supply pads calls for power
consumption estimation. This was accomplished following proper guidelines
provided by the silicon foundry. A first instance, rough power estimate was
quickly calculated by Synopsys Design Compiler, which can combine the
registers switching activity monitored during an RTL simulation with statistically estimated activities for the remaining combinatorial cells. This
218 Chapter 5
method resulted in an estimate of about 12 mW for the core power consumption, at a clock speed of 32.768 MHz, and with a chip rate of 4.096 Mchip/s.
IOLIB_80 : 220 + 80 × 11 + 220 = 1320 µm IOLIB_50 : 380 + 725 + 380 = 1485 µm
Figure 5-27. Die area with different pad libraries.
According to the above mentioned guidelines, 2 VDD3IOCO pads were
inserted in order to provide the 3.3 V power supply to all I/O pads, whilst 2
VDDIOCO pads were included to provide the 1.8 V power supply for the
core and the internal I/O cells buffers. Moreover, 5 VSSIOCO ground pads
were put in the remaining places. All I/O and supply pads include ElectroStatic Discharge (ESD) protections, ruling out the need for specific cells.
Pad cells were added to the netlist after the logic synthesis, while their
placement was performed as the first Back End step by means of the ICpack
tool. This software placed the pad cells taking the desired order into account
(as in Figure 5-1), and checking all the packaging rules. Its output was a
Physical Design Exchange Format (PDEF) file, which is a proprietary file
format used by Synopsys to describe placement information and clustering
of logic cells. Supplementary spaces were added between the most peripheral pads and the corner cells in order to avoid bonding rules violations. This
resulted in a final die area of 1528×1528 µm2
with the IOLIB_80 pads. Starting from Figure 5-27, and considering this added length and the amount of
space necessary for RAM buses routing, the 80 µm pad library still revealed
the correct choice.
In order to avoid the simultaneous switching of all the output pads, which
could impair power supply levels, additional delay cells were inserted between final registers and Outr/Outi output pads to provide a set of different delays (however negligible with respect to the output signals symbol
rate).